An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation
A possible cause for IGT drift in GTO thyristors has been identified using numerical 2D device simulation. An increase of the surface recombination velocity under the oxide between the gate and cathode contacts leads to a small degradation of the upper npn transistor gain, which in turn rises the IGT. This work focuses on the requirements on the geometrical discretization and on the procedure to extract the DC current gains of the individual transistors that form the GTO thyristor.
KeywordsTrigger Point Anode Side Current Gain Surface Recombination Velocity Gate Current
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