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An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation

  • S. Eicher
  • F. Bauer
  • W. Fichtner
Conference paper

Abstract

A possible cause for IGT drift in GTO thyristors has been identified using numerical 2D device simulation. An increase of the surface recombination velocity under the oxide between the gate and cathode contacts leads to a small degradation of the upper npn transistor gain, which in turn rises the IGT. This work focuses on the requirements on the geometrical discretization and on the procedure to extract the DC current gains of the individual transistors that form the GTO thyristor.

Keywords

Trigger Point Anode Side Current Gain Surface Recombination Velocity Gate Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    H. S. Momose et al., IEEE Trans. on Electron Devices, vol. 41, pp 978–987, 1994CrossRefGoogle Scholar
  2. [2]
    P. Taylor, Thyristor Design and Realization, John Wiley & Sons, Chichester. 1987Google Scholar
  3. [3]
    ISE Integrated Systems Engineering AG, MDRAW — User’s Guide, Switzerland, 1994Google Scholar
  4. [4]
    ISE Integrated Systems Engineering AG, DESSIS — Reference Manual, Switzerland, 1994Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • S. Eicher
    • 1
  • F. Bauer
    • 2
  • W. Fichtner
    • 1
  1. 1.Integrated Systems LaboratoryETH-ZürichZürichSwitzerland
  2. 2.ABB Semiconductors Ltd.LenzburgSwitzerland

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