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Simulating Deep Sub-Micron Technologies: An Industrial Perspective

  • P. Packan
Conference paper

Abstract

Meeting the performance goals necessary to be competitive in the semiconductor industry will force novel process and device designs to be evaluated and optimized. Process and device simulators can be a valuable tool in the evaluation and optimization process. As device dimensions approach the 0.10 µm regime, device and process simulators will be pushed to new levels. In device simulations, non-local hot electron effects and mobility modeling are crucial for predictive simulations. The shallow, highly doped junctions required to improve short channel effects forces accurate diffusion models for extremely low energy implants as well as predictive modeling of extended defect interactions. Current areas of application for device and process simulation tools including development, optimization and manufacturing are discussed.

Keywords

Extended Defect Device Simulation Junction Depth Short Channel Effect IEDM Tech 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • P. Packan
    • 1
  1. 1.Intel CorporationHillsboroUSA

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