Monte-Carlo simulation of inverted hot carrier distribution under strong carrier-optical phonon scattering

  • I. Nefedov
  • A. Andronov
Conference paper


Results of Monte-Carlo simulation of hot carrier transport in semiconductors with strong carrier-optical phonon interactions under electric and magnetic fields are presented. It is shown that inverted carrier distributions and negative differential conductivity in Teraherts range can be observed in p — Ge under crossed fields, in low valley of n — GaAs under crossed fields and small parallel electric field and in n - GaAs with weak periodic superlattice potential and narrow minigaps under strong electric field.


Optical Phonon Heavy Hole Strong Electric Field Passive Region Carrier Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    V. A. Kozlov, I. M. Nefedov, Phys. Stat. Sol. (B), vol. 109, p. 393, 1982.CrossRefGoogle Scholar
  2. [2]
    A. V. Muravjev, I. M. Nefedov, S. G. Pavlov, V. N. Shastin, Kvantovaia Elek-tronika, vol. 20, p. 142, 1993 (russian).Google Scholar
  3. [3]
    A. A. Andronov, I. M. Nefedov, Abstract 7th Int. Conf. on Superlattices Microstructures and Microdevices, Banff, Alberia, Canada, p. 2.85, 1994.Google Scholar
  4. [4]
    A. A. Andronov, in Spectroscopy of Nonequilibrium Electrons and Phonos (C. V. Shank and B. P. Zacharchenya eds), Elsevier Science Publishers B. V., p. 169, 1993.Google Scholar
  5. [5]
    A. V. Muravjev, I. M. Nefedov, Yu. N. Nozdrin, V. N. Shastin, Fizika i Technika Poluprovodnikov, vol. 23, p. 1739, 1989 (russian).Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • I. Nefedov
    • 1
  • A. Andronov
    • 1
  1. 1.Institute for Physics of MicrostructuresRussian Academy of ScienceNyzhny NovgorodRussia

Personalised recommendations