Monte-Carlo simulation of inverted hot carrier distribution under strong carrier-optical phonon scattering
Results of Monte-Carlo simulation of hot carrier transport in semiconductors with strong carrier-optical phonon interactions under electric and magnetic fields are presented. It is shown that inverted carrier distributions and negative differential conductivity in Teraherts range can be observed in p — Ge under crossed fields, in low valley of n — GaAs under crossed fields and small parallel electric field and in n - GaAs with weak periodic superlattice potential and narrow minigaps under strong electric field.
KeywordsOptical Phonon Heavy Hole Strong Electric Field Passive Region Carrier Distribution
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