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Two-Barrier model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon

  • S. P. Zimin
  • V. S. Kuznetsov
  • A. V. Prokaznikov

Abstract

In this work the simulation of charge carrier transport processes was carried out in the structure consisted of metal — porous silicon — mono-silicon — metal for p-type silicon on the base of hypothesis of two rectifying transitions. Approbation of this model was done and it was demonstrated a good agreement between theoretical and experimental results. The specific resistivity value was estimated for different formation regimes.

Keywords

Porous Silicon Schottky Barrier Semiconductor Device Current Transport Specific Resistivity 
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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • S. P. Zimin
    • 1
  • V. S. Kuznetsov
    • 1
  • A. V. Prokaznikov
    • 2
  1. 1.Yaroslavl State UniversityYaroslavlRussia
  2. 2.Institute of Microelectronics RASYaroslavlRussia

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