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Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures

  • E. Starikov
  • P. Shiktorov
  • V. Gružinskis
  • L. Reggiani
  • L. Varani
Conference paper

Abstract

Within an ensemble Monte Carlo method, we simulate a bipolar transport in a vertical layered n-GaAs/n-AlGaAs/i-GaAs heterostructure placed between n + and p + contacts. A very fast switching time and, hence, a very high frequency (up to 1 THz) of the voltage oscillations are predicted.

Keywords

Monte Carlo Switching Time Load Resistance Negative Differential Conductance Voltage Oscillation 
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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • E. Starikov
    • 1
  • P. Shiktorov
    • 1
  • V. Gružinskis
    • 1
  • L. Reggiani
    • 1
    • 2
  • L. Varani
    • 1
    • 3
  1. 1.Semiconductor Physics InstituteVilniusLithuania
  2. 2.Istituto Nazionale di Fisica della Materia, Dipartimento di Scienza dei MaterialiUniversità di LecceLecceItaly
  3. 3.Centre d’ Electronique de MontpellierUniversité Montpellier IIMontpellier Cedex 5France

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