Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures
Within an ensemble Monte Carlo method, we simulate a bipolar transport in a vertical layered n-GaAs/n-AlGaAs/i-GaAs heterostructure placed between n + and p + contacts. A very fast switching time and, hence, a very high frequency (up to 1 THz) of the voltage oscillations are predicted.
KeywordsMonte Carlo Switching Time Load Resistance Negative Differential Conductance Voltage Oscillation
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