Abstract
Within an ensemble Monte Carlo method, we simulate a bipolar transport in a vertical layered n-GaAs/n-AlGaAs/i-GaAs heterostructure placed between n + and p + contacts. A very fast switching time and, hence, a very high frequency (up to 1 THz) of the voltage oscillations are predicted.
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© 1995 Springer-Verlag Wien
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Starikov, E., Shiktorov, P., Gružinskis, V., Reggiani, L., Varani, L. (1995). Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_77
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_77
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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