Skip to main content
SpringerLink
Log in
Book cover

Simulation of Semiconductor Devices and Processes pp 314–317Cite as

Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method

  • Conference paper

  • 212 Accesses

Abstract

The transfer impedance method in the time-domain formulation is applied to calculate the impedance field of submicron n + nn + GaAs diodes in the framework of a closed hydrodynamic approach. The method enables us to determine the voltage noise-spectrum associated with velocity-fluctuations. The good agreement found with Monte Carlo simulations validates the proposed theoretical approach.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. Ghione and F. Filicori. IEEE Trans. Comp. Aided Design Integrated Cir. System 12, 425 (1993).

    Article  Google Scholar 

  2. V. Gružinskis, E. Starikov, P. Shiktorov, L. Reggiani, L. Varani. Appl. Phys. Lett. 64, 1662 (1994).

    Article  Google Scholar 

  3. V. Gružinskis, E. Starikov, P. Shiktorov, L. Reggiani, L. Varani. J. Appl. Phys. 76, 5260 (1994).

    Article  Google Scholar 

  4. J.P. Nougier, J.C. Vaissiere, D. Gasquet, A. Motadid. J. Appl. Phys. 52, 5683 (1981).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Semiconductor Physics Institute, A. Goštauto 11, 2600, Vilnius, Lithuania

    P. Shiktorov, V. Gružinskis, E. Starikov, L. Reggiani & L. Varani

  2. Istituto Nazionale di Fisica della Materia, Dipartimento di Scienza dei Materiali, Università di Lecce, Via per Monteroni, 73100, Lecce, Italy

    L. Reggiani

  3. Centre d’ Electronique de Montpellier, Université Montpellier II, 34095, Montpellier Cedex 5, France

    L. Varani

Authors
  1. P. Shiktorov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. Gružinskis
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. Starikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. Reggiani
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. Varani
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

Rights and permissions

Reprints and permissions

Copyright information

© 1995 Springer-Verlag Wien

About this paper

Cite this paper

Shiktorov, P., Gružinskis, V., Starikov, E., Reggiani, L., Varani, L. (1995). Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_76

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_76

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation