Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface
A simulation tool for calculating the soft error rate due to α-particle strikes in SRAM’s is described. The simulator uses Monte Carlo methods to determine the initial energy and angle of α-particles, then uses layout, process and device information to determine a histogram of charge collection in a memory cell. The soft error rate is determined from a knowledge of the memory cells’ critical charge. A graphical user interface for the soft error simulator is also described
KeywordsMemory Cell Silicon Surface Charge Collection Soft Error Critical Charge
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- S. Satoh et al., “Cmos-sram soft error simulation system, ”NUPAD-V, pp. 181–184, 1994.Google Scholar
- G.R. Srinivasan et al., “Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation, ”Proc. IRPS, pp. 12–16, Apr. 1994.Google Scholar
- W.-K. Chu et al., Backscattering Spectrometry, Academic Press, 1978.Google Scholar
- J.K. Ousterhout. “An x11 toolkit based on the tcl language, ”Proc. USENIX Conf., 1991.Google Scholar