Skip to main content
SpringerLink
Log in

Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation

  • Conference paper
Simulation of Semiconductor Devices and Processes

  • 214 Accesses

Abstract

The charge collection induced by incident particles was estimated by the 3-dimensional device simulation and the quantitative evaluation method using the nuclear microprobe. The role of the buried p +layer was well analyzed in terms of the soft-error immunity of DRAMs. The methods developed here are applicable to optimize the well structure for the soft-error immunity of advanced DRAMs.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Similar content being viewed by others

References

  1. K. Tsukamoto et al., Nucl. Instr. and Meth. B59/60, p.584 (1991)

    Google Scholar 

  2. H. Sayama et al., Technical Digest of IEDM, p.815 (1992)

    Google Scholar 

  3. J.F. Gibbons et al., “Projected Range Statistics [Semiconductors and Related Materials]”, (1975)

    Google Scholar 

  4. R.D. Ryan, IEEE Trans. Nucl. Sci., NS-20, p.473 (1973)

    Article  Google Scholar 

  5. Y. Ohno et al., IEICE Trans. Electron, vol.E77-C, no.3, p.399 (1994)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. ULSI Laboratory, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo, 664, Japan

    T. Kishimoto, K. Sonoda, H. Sayama, S. Komori, T. Nishimura, N. Kotani & H. Miyoshi

  2. Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka, 560, Japan

    Y. Ohno & M. Takai

  3. Osaka National Research Institute, AIST, Ikeda, Osaka, 563, Japan

    A. Kinomura, Y. Horino & K. Fujii

Authors
  1. Y. Ohno
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Kishimoto
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Sonoda
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Sayama
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. Komori
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Kinomura
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Y. Horino
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. K. Fujii
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. T. Nishimura
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. N. Kotani
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. M. Takai
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. H. Miyoshi
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

Rights and permissions

Reprints and permissions

Copyright information

© 1995 Springer-Verlag Wien

About this paper

Cite this paper

Ohno, Y. et al. (1995). Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_73

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_73

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation