Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors
A capacitance model for microwave Double Heterojunction Bipolar Transistors (DHBTs) is presented to account for their special behavior in small-signal S-parameters. A physical picture of barrier effects in DHBTs is described.
KeywordsCollector Current Barrier Effect Capacitance Model Electric Field Profile 2DEG Density
Unable to display preview. Download preview PDF.
- M. Hafizi, P.A. Macdonald, T. Liu, D.B. Rensch and T.C. Cisco, “Microwave Power Performance of InP-based DHBTs for C-and X-band Applications, ”in Digest of 1994 IEEE MTT-Symposium, pp.671–674, San Diego, May 1994Google Scholar
- R.A. Sugeng, C.J. Wei, J.C.M. Hwang, J.I. Song, W.P. Hong and J.R. Hayes, “Junction Barrier Effects on the Microwave Power Performance of DHBTs”, in Proc. IEEE/Cornell Conference on Advanced Concepts in High-speed semiconductor Devices and Circuits, Ithaca, Aug. 2–4, 1993, pp.52–61Google Scholar
- C.J. Wei and J.C.M. Hwang, “A new method for direct extraction of HBT equivelent circuit elements” in IEEE MTT-S Int”l Microwave Symp. Dig., 1994, pp. 1245–1248Google Scholar