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Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors

  • C. J. Wei
  • H.-C. Chung
  • Y. A. Tkachenko
  • J. C. M. Hwang
Conference paper

Abstract

A capacitance model for microwave Double Heterojunction Bipolar Transistors (DHBTs) is presented to account for their special behavior in small-signal S-parameters. A physical picture of barrier effects in DHBTs is described.

Keywords

Collector Current Barrier Effect Capacitance Model Electric Field Profile 2DEG Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Reference

  1. [1]
    M. Hafizi, P.A. Macdonald, T. Liu, D.B. Rensch and T.C. Cisco, “Microwave Power Performance of InP-based DHBTs for C-and X-band Applications, ”in Digest of 1994 IEEE MTT-Symposium, pp.671–674, San Diego, May 1994Google Scholar
  2. [2]
    R.A. Sugeng, C.J. Wei, J.C.M. Hwang, J.I. Song, W.P. Hong and J.R. Hayes, “Junction Barrier Effects on the Microwave Power Performance of DHBTs”, in Proc. IEEE/Cornell Conference on Advanced Concepts in High-speed semiconductor Devices and Circuits, Ithaca, Aug. 2–4, 1993, pp.52–61Google Scholar
  3. [3]
    C.J. Wei and J.C.M. Hwang, “A new method for direct extraction of HBT equivelent circuit elements” in IEEE MTT-S Int”l Microwave Symp. Dig., 1994, pp. 1245–1248Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • C. J. Wei
    • 1
  • H.-C. Chung
    • 1
  • Y. A. Tkachenko
    • 1
  • J. C. M. Hwang
    • 1
  1. 1.EECS DepartmentLehigh UniversityBethlehemUSA

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