Numerical Analysis of Hot-Electron Effects in GaAs MESFETs
For the first time, numerical simulation of GaAs metal-semiconductor field-effect transistors subjected to hot-electron-induced degradation was performed. Experimentally observed open-channel current reduction and gate-drain field relaxation were verified. Maximum electric field which governs hot-carrier phenomena was found to depend on Vdg and not on Vds, as in the case of Si MOSFET. Extended surface depletion as a result of traps observed by high-voltage electron-beam-induced current imaging agreed well with Nt of 5×1012 and Lt of 0.1 µ used in simulation.
KeywordsMaximum Electric Field Surface State Density Drain Side Simulated Electric Field GaAs MESFET
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