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Numerical Analysis of Hot-Electron Effects in GaAs MESFETs

  • Y. A. Tkachenko
  • C. J. Wei
  • J. C. M. Hwang
  • D. M. Hwang

Abstract

For the first time, numerical simulation of GaAs metal-semiconductor field-effect transistors subjected to hot-electron-induced degradation was performed. Experimentally observed open-channel current reduction and gate-drain field relaxation were verified. Maximum electric field which governs hot-carrier phenomena was found to depend on Vdg and not on Vds, as in the case of Si MOSFET. Extended surface depletion as a result of traps observed by high-voltage electron-beam-induced current imaging agreed well with Nt of 5×1012 and Lt of 0.1 µ used in simulation.

Keywords

Maximum Electric Field Surface State Density Drain Side Simulated Electric Field GaAs MESFET 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka and A. Tamura, “Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect”, in Proc. Int’l Reliability Physics Symp., 1992, pp. 127–130.Google Scholar
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Y. A. Tkachenko
    • 1
  • C. J. Wei
    • 1
  • J. C. M. Hwang
    • 1
  • D. M. Hwang
    • 2
  1. 1.Lehigh UniversityBethlehemUSA
  2. 2.Motorola, APRDLAustinUSA

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