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Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations

  • M. Netzel
  • R. Herzer

Abstract

In this paper calculations of blocking characteristics for edge termination structures of 600V- and 1200V-IGBTs by means of the device-simulator ToSCA are presented. Because of the efficient grid concept and the properties of ToSCA it becomes possible to solve the complete device equations for very complex grids in relatively short time.

Keywords

Edge Structure Field Ring Triangle Edge Complete Mesh Complex Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Netzel
    • 1
  • R. Herzer
    • 2
  1. 1.Institute for Solid State ElectronicsTU IlmenauIlmenauGermany
  2. 2.SEMIKRON Elektronik GmbH NürnbergNürnbergGermany

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