Optimization of a Recessed LOCOS using a tuned 2-D process simulator
The application of the conventional LOCOS technique (LOCal Oxidation of Silicon) to grow oxide structures for IC device isolation is no longer effective below 0.5 µm. In order to support the optimization of an alternative isolation technique, adequate simulations tools arc required. In this work we describe an accurate tuning of 2-D simulation program, which uses a viscoclastic model for the oxidation of silicon, and its application to the optimization Recessed LOCOS isolation.
KeywordsSimulated Profile Isolation Scheme LOCal Oxidation Manufacturing Process Complexity Field Oxide
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