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Optimization of a Recessed LOCOS using a tuned 2-D process simulator

  • G. P. Carnevale
  • P. Colpani
  • A. Marmiroli
  • A. Rebora
  • A. Tixier

Abstract

The application of the conventional LOCOS technique (LOCal Oxidation of Silicon) to grow oxide structures for IC device isolation is no longer effective below 0.5 µm. In order to support the optimization of an alternative isolation technique, adequate simulations tools arc required. In this work we describe an accurate tuning of 2-D simulation program, which uses a viscoclastic model for the oxidation of silicon, and its application to the optimization Recessed LOCOS isolation.

Keywords

Simulated Profile Isolation Scheme LOCal Oxidation Manufacturing Process Complexity Field Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Silvaco International “ATHENA 2D Process Simulation Framework User’s Guide” Santa Clara, California, mar 1994Google Scholar
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    V. Senez, D. Collard, P. Ferreira, B. Baccus “Simulation of advanced field isolation using calibrated viscoelastic stress analysis” IEDM, pp. 881–884, 1994Google Scholar
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    C.S. Rafferty “Stress effects in silicon oxidation: simulation and experiments” Ph. D. Thesis, pp. 184–186, Stanford University, dec 1989Google Scholar
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    P. Sutardja, W.G. Oldham IEEE Trans. Electron Devices, vol. ED-36, pp. 2415–2421, nov 1989CrossRefGoogle Scholar
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    “ULYSSES User’s Guide” IMEC — SGS-Thomson, jun 1993Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • G. P. Carnevale
    • 1
  • P. Colpani
    • 2
  • A. Marmiroli
    • 2
  • A. Rebora
    • 2
  • A. Tixier
    • 3
  1. 1.Università degli studi di PaviaPaviaItaly
  2. 2.SGS-THOMSON Microelectronics, Central R&DItaly
  3. 3.Université de LilleLille IFrance

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