Abstract
This paper describes the techniques for adaptive grid generation for dopant implantation and diffusion in process simulation.
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References
M. Bieterman, I. Babuska, “The finite element method for parabolic equations, I. A posteriori error estimation, ”Num. Math., vol. 40, p.339, 1982.
C. C. Lin, M. E. Law, and R. E. Lowther, “Automatic Grid Refinement and Higher Order Flux Discretizations of Diffusion Modeling, ”IEEE Trans. Computer-Aided Design, vol. CAD-4, No. 12, p. 436, Aug. 1993.
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C. C. Lin, M. E. Law, “Mesh Adaption and Flux Discretizations for Dopant Diffusion Modeling, ”NUPAD V Proceeding, p. 151, Honolulu, June,1995.
R. E. Bank, “Moving Mesh, ”NSF/SEMATECH Workshop on Gridding in VLSI TCAD, section V, Mar. 1994.
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© 1995 Springer-Verlag Wien
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Lin, CC., Law, M.E. (1995). 2-D Adaptive Simulation of Dopant Implantation and Diffusion. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_68
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_68
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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