Abstract
Though the importance of CAD increases, the analog circuit design is still mostly done by experience. It is known that this is because of insufficient model quality, or quality of extracted parameter values. We have developed a new MOSFET model based on the drift-diffusion approximation. By comparing a conventional piece-wise model with our precise model, critical shortage of the conventional models, which restricts the application of CAD for analog circuits, is demonstrated.
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References
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© 1995 Springer-Verlag Wien
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Miura-Mattausch, M., Rahm, A., Prigge, O. (1995). Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_67
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_67
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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