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Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation

  • M. Miura-Mattausch
  • A. Rahm
  • O. Prigge
Conference paper

Abstract

Though the importance of CAD increases, the analog circuit design is still mostly done by experience. It is known that this is because of insufficient model quality, or quality of extracted parameter values. We have developed a new MOSFET model based on the drift-diffusion approximation. By comparing a conventional piece-wise model with our precise model, critical shortage of the conventional models, which restricts the application of CAD for analog circuits, is demonstrated.

Keywords

Circuit Performance Analog Circuit Conventional Model Linear Amplifier Drain Side 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Y. P. Tsividis and K. Suyama, “MOSFET modeling for analog circuit CAD: Problems and Prospects, ”IEEE J. Solid-State Circuits, vol. 29, no. 3, pp. 210–216, 1994.CrossRefGoogle Scholar
  2. [2]
    J. A. Power, “An enhanced SPICE MOSFET model suitable for analog applications, ”IEEE Trans. Computer-Aided Design, vol. 11, no. 11, pp. 1418–1424, 1992.CrossRefGoogle Scholar
  3. [3]
    M. Miura-Mattausch, U. Feldmann, A. Rahm, M. Bollu, and D. Savignac, “Unified complete MOSFET model for analysis of digital and analog circuits, ”Proc. IC-CAD, pp. 264–267, 1994.Google Scholar
  4. [4]
    MEDUSA User’s Guide, RWTH Aachen, Germany, 1989.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Miura-Mattausch
    • 1
  • A. Rahm
    • 1
  • O. Prigge
    • 1
  1. 1.Corporate Research and DevelopmentSiemens AGMunichGermany

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