Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors (D-GTO)
High voltage GTO’s require a subtle control of excess charge to exhibit low forward voltage drop as well as low turn-off loss. In this paper it is investigated whether and to what degree device behaviour could be improved if plasma dynamics is controlled with gate electrodes on cathode and anode side. Computer simulations reveal that such D-GTO’s exhibit excellent static characteristics and that with a continuous control of electron to hole current ratios on both sides a reduction of turn-off energy by a factor of about 50 seems possible.
KeywordsPlasma Dynamics Space Charge Layer Cathode Emitter Gate Current Average Carrier Concentration
Unable to display preview. Download preview PDF.
- R. Sittig, “Chances, Errors and Progress — A Survey on Power Device Development”, Proc. of the Conf. to the 25th anniversary of the Laboratoire d’Analyse et d’Architecture des Systemes, Toulouse, Cèpadues-Editions, Toulouse, pp 159–175, 93Google Scholar
- ATLAS 2D Device Simulation Framework, User’s Manual, Silvaco InternationalGoogle Scholar
- T. Ogura, A. Nakagawa, M. Atsuta, Y. Kamei and K. Takigami, “High-Frequency 6000 V Double-Gate GTO’s”, IEEE Transactions on Electron Devices, Vol. 40, No. 3, pp 628–633, March 93Google Scholar
- F. Bauer, T. Stockmeier, H. Dettmer, H. Lendenmann and W. Fichtner, “On the Suitability of BiMOS High Power Devices in intelligent, snubberless Power Conditioning Circuits”, Proc. of the 6th Internat. Symposium on Power Semiconductor Devices & IC’s, Davos, Switzerland, pp 201–206, 94Google Scholar