Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors
A generalisation of the conventional relaxation-time approximation for bipolar transport with electron-hole scattering is presented. A simple phenomenological ansatz leads to Generalised Drift-Diffusion current equations, which contain both conventional DriftDiffusion equations and matrix-form Drift-Diffusion equations with drag currents as special cases. The effect on carrier transport in semiconductor devices under low and high injection conditions is discussed analytically and compared with simulation results.
KeywordsVoltage Drop Equilibrium Part Collision Term Diffusion Mobility Ionize Impurity Scattering
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