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Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors

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Simulation of Semiconductor Devices and Processes

Abstract

A generalisation of the conventional relaxation-time approximation for bipolar transport with electron-hole scattering is presented. A simple phenomenological ansatz leads to Generalised Drift-Diffusion current equations, which contain both conventional DriftDiffusion equations and matrix-form Drift-Diffusion equations with drag currents as special cases. The effect on carrier transport in semiconductor devices under low and high injection conditions is discussed analytically and compared with simulation results.

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References

  1. N.H. Fletcher: Proc. IRE 45, 862 (1957)

    Article  Google Scholar 

  2. G.M. Avakyants: Radiotechnika i Elektronika 8, 1919 (1963)

    Google Scholar 

  3. T.T. Mnatsakanov, I.L. Rostovtsev, N.I. Philatov: Solid-State-Electronics 30, 579 (1987)

    Article  Google Scholar 

  4. T.T. Mnatsakanov: Phys. Stat. Sol., B 143, 225 (1987)

    Google Scholar 

  5. D. Kane, R. Swamon: Journal of Applied Physics 72, 5294 (1992)

    Article  Google Scholar 

  6. E. Velmre, A. Koel, F. Masszi: SISDEP 5, 433 (1993)

    Google Scholar 

  7. F. Dannhäuser: Solid-Stale-Electronics 15, 1371 (1972)

    Article  Google Scholar 

  8. J. Krause: Solid-State-Electronics 15, 1377 (1972)

    Article  Google Scholar 

  9. M. Rosling, H. Bleichner, M. Lundqvist, E. Nordlander: Solid-State-Electronics 35, 1223 (1992)

    Article  Google Scholar 

  10. D. Reznik, W. Gerlach: Solid-State-Electronics 38, 437 (1995)

    Article  Google Scholar 

  11. T. Mnatsakanov, B. Gresserov, L. Pomortseva: Solid-State-Electronics 38, 225 (1995)

    Article  Google Scholar 

  12. D. Reznik, W. Gerlach: to be published in Journal of Applied Physics

    Google Scholar 

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Author information

Authors and Affiliations

  1. Institut für Werkstoffe der Elektrotechnik, TU-Berlin, Jebensstraße 1, 10623, Berlin, Germany

    D. Reznik

Authors
  1. D. Reznik
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Reznik, D. (1995). Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_61

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_61

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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