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Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation

  • C. Brisset
  • F.-X. Musalem
  • P. Dollfus
  • P. Hesto
Conference paper

Abstract

The action of the Lorentz force on carrier motion is now included in MONACO, our 3D Monte Carlo device simulator. As examples we model two typical magnetic-field-sensitive devices, in which the detected signal is either the Hall voltage, or the induced current at two contacts. The results are in good agreement with expected characteristics.

Keywords

Lorentz Force Potential Profile Magnetic Sensor Equipotential Line Vertical Magnetic Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • C. Brisset
    • 1
  • F.-X. Musalem
    • 1
  • P. Dollfus
    • 1
  • P. Hesto
    • 1
  1. 1.Institut d’Électronique FondamentaleUniversité Paris-SudOrsay cedexFrance

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