Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector
The effect of structure parameters and operation conditions on the base-collector capacitance and intrinsic transit time of HBT with buried subcollector has been investigated by using a numerical model. It is shown that non-planar geometry of HBT with buried subcollector leads to specific features of voltage dependence of the base-collector capacitance. The non-uniform collector doping profile has been proposed to reduce collector transit time and to optimize HBT structure for low-voltage operation.
KeywordsCollector Structure Heterojunction Bipolar Transistor Collector Layer Overshoot Region Monte Carlo Particle
Unable to display preview. Download preview PDF.