Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector

  • G. Khrenov
  • E. Kulkova
Conference paper


The effect of structure parameters and operation conditions on the base-collector capacitance and intrinsic transit time of HBT with buried subcollector has been investigated by using a numerical model. It is shown that non-planar geometry of HBT with buried subcollector leads to specific features of voltage dependence of the base-collector capacitance. The non-uniform collector doping profile has been proposed to reduce collector transit time and to optimize HBT structure for low-voltage operation.


Collector Structure Heterojunction Bipolar Transistor Collector Layer Overshoot Region Monte Carlo Particle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    J-I. Song, B.W-P. Hong, C.J. Palmstrom, B.P. Van der Gaag and K.B. Chough, “Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors, ”IEEE Electron Device Lett., vol. 15, no. 3, pp. 94–96, 1994.CrossRefGoogle Scholar
  2. [2]
    G. Khrenov, V. Ryzhii and S. Kartashov, “AlGaAs/GaAs HBT Collector Optimization for High Frequency Performance, ”Solid-State Electron., vol. 37, no. 1, pp. 213–214, 1994.CrossRefGoogle Scholar
  3. [3]
    J-I. Song, M.R. Frei, J.R. Hayes, R. Bhat and H.M. Cox, “Self-Aligned In-AlAs/InGaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy, ”IEEE Electron Device Lett., vol. 15, no. 4, pp. 123–125, 1994.CrossRefGoogle Scholar
  4. [4]
    G. Khrenov, V. Ryzhii and S. Kartashov, “Fourier Analysis-Based Method for High-Frequency Performance Calculation of Heterojunction Bipolar Transistor, ”Jpn. J. Appl. Phys., vol. 33, Pt. 1, no. 8, pp. 4550–4554, 1994.CrossRefGoogle Scholar
  5. [5]
    A.F.J. Levi, R.N. Nottenburg, Y.K. Chen, P.H. Beton and M.B. Panish, “Nonequi-librium Electron Dynamics in Bipolar Transistors, ”Solid-State Electron., vol. 32, no. 12, pp. 1289–1295, 1989.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • G. Khrenov
    • 1
  • E. Kulkova
    • 2
  1. 1.Computer Solid State Physics LaboratoryThe University of AizuAizu-Wakamatsu CityJapan
  2. 2.Research Center “MICROEL”MoscowRussia

Personalised recommendations