Abstract
An accurate and user friendly tool for the simulation of Ti/TiN sputter deposition processes has been developed. Simulations have been compared to SEM measurements, which exhibit excellent agreement for both, the collimated as well as the uncollimated case. A final test showed that this simulator is capable of predicting the deposited film on the collimator sidewalls.
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References
R.V. Joshi and S. Brodsky. Collimated Sputtering of TiN/Ti Liners into Sub-Half Micron High Aspect Ratio Contacts/Lines. In Ninth International VLSI Multilevel Interconnection Conference, pages 253–259, June 1992.
T.S. Cale. EVOLVE — A Low Pressure Deposition Simulator, Version 4.-0b. Center for Solid State Electronics Research, ASU, August 1994.
S. Selberherr, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, H. Stippel, P. Verhas, and K. Wimmer. The Viennese TCAD System. In Proc.VPAD, pages 32–35, 1991.
Z. Lin. Simulation of Flux Distributions and Flat Substrate Deposition Profiles during Collimated Sputter Deposition. Center for Solid State Electronics Research, ASU, August 1994.
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© 1995 Springer-Verlag Wien
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Stippel, H., Reddy, K. (1995). Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_58
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_58
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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