Abstract
A first principle based quasi-deterministic 3D particle dynamics Monte Carlo simulation method was developed for examining mesoscopic (subhalf-micron) Si electron devices. Applying a novel method for calculating the field and potential distributions, the real trajectories of the carriers are exactly followed. Consequently, an important feature of this method is that all Coulomb scattering are inherently taken into account. A brief description of the physical background, the models and the simulation principle is given. A quasi deterministic model for impact ionization is developed and some results are presented.
The research was sponsored by — Digital Equipment Co. (External European Research Projects HG-001 and SW-003), — Swedish Board of Technical Development (NUTEK). — Hungarian Research Foundation (OTKA 777 and OTKA T-016748).
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References
Tarnay, K.-Habermajer, I.-Poppe, A.-Kocsis, T.-Masszi, F.:Modeling the Carrier — Lattice Interactions and the Energy Transport in a 3D Particle Dynamics Monte Carlo Simulator for MOS Structures. Abstracts of NASECODE X, 21–24 June 1994, Dublin, pp. 28–29.
Tarnay, K. et al..: The Impact Ionisation Process of α Particles in Mesoscopic Structures: Simulation by Monte Carlo Method. Physica Scripta T54, pp. 256–262, 1994
Tang, J. Y.-Hess, K.: Impact Ionization of Electrons in Silicon (Steady State). J. Appl.Phys. 54, No.9. pp.5130–5144, 1983
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© 1995 Springer-Verlag Wien
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Tarnay, K., Masszi, F., Kocsis, T., Poppe, A. (1995). Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_57
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_57
Publisher Name: Springer, Vienna
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