Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program
A first principle based quasi-deterministic 3D particle dynamics Monte Carlo simulation method was developed for examining mesoscopic (subhalf-micron) Si electron devices. Applying a novel method for calculating the field and potential distributions, the real trajectories of the carriers are exactly followed. Consequently, an important feature of this method is that all Coulomb scattering are inherently taken into account. A brief description of the physical background, the models and the simulation principle is given. A quasi deterministic model for impact ionization is developed and some results are presented.
KeywordsBrillouin Zone Impact Ionization Coulomb Scattering Interface Charge Density Impact Ionization Rate
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- Tarnay, K.-Habermajer, I.-Poppe, A.-Kocsis, T.-Masszi, F.:Modeling the Carrier — Lattice Interactions and the Energy Transport in a 3D Particle Dynamics Monte Carlo Simulator for MOS Structures. Abstracts of NASECODE X, 21–24 June 1994, Dublin, pp. 28–29.Google Scholar
- Tang, J. Y.-Hess, K.: Impact Ionization of Electrons in Silicon (Steady State). J. Appl.Phys. 54, No.9. pp.5130–5144, 1983Google Scholar