Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices

  • Carsten Pigorsch
  • Roland Stenzel
  • Wilfried Klix
Conference paper


A two dimensional self consistent solution of the Schrödinger and the Poisson equation is obtained. This is coupled with a three dimensional drift-diffusion model to simulate nanometer heterojunction devices with respect to the microscopic properties of the electrons. Some examples of calculated III-V semiconductor structures are represented.


Quantum Wire Schrodinger Equation High Electron Mobility Transistor Discrete Energy Level Heterojunction Device 
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  1. [1]
    S. E. Laux, Numerical Methods for Calculating Self-Consistent Solutions of Electron States in Narrow Channels, Proc.of NASECODE V, pp. 270–275, 1987Google Scholar
  2. [2]
    S. E. Laux, A. C. Warren, Self-Consistent Calculation of Electron States in Narrow Channels, IEEE IEDM 1986, pp. 567–570Google Scholar
  3. [3]
    T. Kerkhoven et al., Efficient numerical solution of electron states in quantum wires, J. Appl. Phys., Vol. 68, No. 7, pp.3461–3469, 1990CrossRefGoogle Scholar
  4. [4]
    A. Abou-Elnour, K. Schuenemann, An Efficient and Accurate Self-Consistent Calculation of Electronic States in Modulation Doped Heterostructures, Solid States El., Vol. 37, No. 1, pp. 27–30, 1994CrossRefGoogle Scholar
  5. [5]
    R. Stenzel et al., Device Simulation of Novel In-Plane-Gated Field-Effect Transistors, Jpn. J. Appl. Phys., Vol. 33, No. 3A, pp. 1243–1247, 1994CrossRefGoogle Scholar
  6. [6]
    T. Wang, C. H. Hsieh, Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFET’s, IEEE Trans. ED, Vol. 37, No. 9, pp. 1930–1938, 1990CrossRefGoogle Scholar
  7. [7]
    F. Stern, S. Das Sarma, Electron energy levels in GaAs-Ga(1-x)Al(x)As heterojunctions, Physical Review B, Vol. 30, No. 2, pp. 840–848, 1984CrossRefGoogle Scholar
  8. [8]
    J. Sánchez-Dehesa et al., Electronic energy of quantum-well wires, J. Appl. Phys., Vol. 73, No. 10, pp. 5027–5031, 1993CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Carsten Pigorsch
    • 1
  • Roland Stenzel
    • 1
  • Wilfried Klix
    • 2
  1. 1.Dresden University of Technology and EconomicsDresdenGermany
  2. 2.Dresden University of TechnologyDresdenGermany

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