Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices
A two dimensional self consistent solution of the Schrödinger and the Poisson equation is obtained. This is coupled with a three dimensional drift-diffusion model to simulate nanometer heterojunction devices with respect to the microscopic properties of the electrons. Some examples of calculated III-V semiconductor structures are represented.
KeywordsQuantum Wire Schrodinger Equation High Electron Mobility Transistor Discrete Energy Level Heterojunction Device
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