Advertisement

Finite Element Monte Carlo Simulation of Recess Gate FETs

  • S. Babiker
  • A. Asenov
  • J. R. Barker
  • S. P. Beaumont
Conference paper

Abstract

In this paper we report on a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. For the first time this module combines a precise description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in ultra-short recess gate compound FETs. The capabilities of the new finite element MC module are illustrated in example simulations of two compound FETs fabricated in the Nanoelectronics Research Centre of Glasgow University.

Keywords

Monte Carlo Device Geometry Monolithic Microwave Integrate Circuit Quadrilateral Finite Element Ensemble Monte Carlo Simulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. Asenov, D. Reid, J.R. Barker, N. Cameron and S.P. Beaumont, “Finite element simulation of recess gate MESFETs and HEMTs: The simulator H2F”, in Simulation of Semiconductor Devices and Processes, eds S. Selberherr, H. Stippel & E. Strasser, Springier Verlag, Wien, pp. 265–268, 1993.CrossRefGoogle Scholar
  2. 2.
    C. Moglestue, “Monte Carlo particle study of of the intrinsic noise figure in GaAs MESFETs”, IEEE Trans. Elevctron Dev. Vol. ED-32, pp. 2092–2096, 1985.CrossRefGoogle Scholar
  3. 3.
    G. Jensen, B. Lund and T. Fjeldly, “Monte Carlo simulation of short channel Heterostructure Field Effect Transistors”, IEEE Trans. Electron Dev. Vol. ED-38, No. 4, pp. 840–851, 1991.CrossRefGoogle Scholar
  4. 4.
    D. Park and K. Brennan, “Theoretical Analysis of AlGaAs/InGaAs pseudomorphic HEMTs using the ensemble Monte Carlo simulation”, IEEE Trans. Electron Dev. Vol. ED-36, No. 3, pp. 1254–1263, 1989.CrossRefGoogle Scholar
  5. 5.
    N. Cameron, S. Furgeson, M.R.S. Taylor, S. Beaumont, M. Holand, C. Tronche, M. Soulard and P.H. Ladbrooke, “Selectively dry gate recessed GaAs MESFETs, HEMTs and monolithic microwave integrated circuits” J. Vac Sci Techol, Vol. B11, No.6, pp. 2244–2248, 1993.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • S. Babiker
    • 1
  • A. Asenov
    • 1
  • J. R. Barker
    • 1
  • S. P. Beaumont
    • 1
  1. 1.Nanoelectronics Research Centre Department of Electronics and Electrical EngineeringGlasgow UniversityGlasgowScotland, UK

Personalised recommendations