Abstract
The relative importance of band structure and scattering rate modeling for the modeling of hot electrons is evaluated. It turns out that the influence of band structure is dominant, while the details of the scattering models are less significant. Consequently computationally rather efficient models for phonon scattering and impact ionization scattering can be applied without sacrificing accuracy as long as the full band structure is considered.
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© 1995 Springer-Verlag Wien
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Jungemann, C., Keith, S., Meinerzhagen, B., Engl, W. (1995). On the influence of band structure and scattering rates on hot electron modeling. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_53
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_53
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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