Three-Dimensional Monte Carlo Simulation of Boron Implantation into <100>Single-Crystal Silicon Considering Mask Structure

  • Myung-sik Son
  • Hwa-sik Park
  • Ho-jung Hwang


A new and computationally efficient three-dimensional Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate three-dimensional mask effects for low-energy boron implantation into <100> single-crystal silicon. The simulator accurately and efficiently simulates three-dimensional implanted doping profiles under the mask structure and window. All of the typical implant parameters such as dose, tilt angle, rotation angle, in addition to energy are considered. The orientation of silicon substrate, ion beam divergence, presence of native oxide layer, wafer temperature, orientation of masking edge, masking layer thickness, and structure and size of window are also taken into account.


Monte Carlo Tilt Angle Crystalline Silicon Doping Profile Native Oxide Layer 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Myung-sik Son
    • 1
  • Hwa-sik Park
    • 2
  • Ho-jung Hwang
    • 1
  1. 1.Semiconductor Process and Device Laboratory, Department of Electronic EngineeringChung-Ang UniversitySeoulKorea
  2. 2.Integrated Circuits Laboratory, Department of Electrical EngineeringStanford UniversityStanfordUSA

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