Scaling Considerations of Bipolar Transistors using 3D Device Simulation

  • M. Schröter
  • D. J. Walkey


The influence of 3D effects on high-speed bipolar transistors is demonstrated using a 3D mixed-mode device/circuit simulator. Basic scaling equations suitable for compact modelling are presented, and the transient behaviour predicted by a scalable bipolar compact model is compared to 3D device simulation.


High Current Density Bipolar Transistor Transit Frequency Emitter Size Emitter Length 


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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Schröter
    • 1
  • D. J. Walkey
    • 2
  1. 1.Telecom Microeletronics CentreNorthern TelecomOttawaCanada
  2. 2.Dept. of ElectronicsCarleton UniversityOttawaCanada

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