Scaling Considerations of Bipolar Transistors using 3D Device Simulation
The influence of 3D effects on high-speed bipolar transistors is demonstrated using a 3D mixed-mode device/circuit simulator. Basic scaling equations suitable for compact modelling are presented, and the transient behaviour predicted by a scalable bipolar compact model is compared to 3D device simulation.
KeywordsHigh Current Density Bipolar Transistor Transit Frequency Emitter Size Emitter Length
Unable to display preview. Download preview PDF.