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Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation

  • M. Lades
  • J. Frank
  • J. Funk
  • G. Wachutka

Abstract

With the view to analyzing piezoresistive effects in silicon microstructures we implemented a rigorous physically-based model in the multidimensional general purpose device simulator DESSISISE In this model, the dependence of the piezoresistive coefficients on temperature and doping concentration is included in a numerically tractable way. Using a commercial TCAD system (ISE), the practicability of the approach is demonstrated by performing a complete simulation sequence for realistic microdevices ranging from the layout design up to the analysis of the device operation.

Keywords

Wheatstone Bridge Silicon Structure Shear Coefficient Silicon Microstructure Mechanical Stress Tensor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Lades
    • 1
  • J. Frank
    • 1
    • 2
  • J. Funk
    • 1
    • 3
  • G. Wachutka
    • 1
  1. 1.Chair for Physics of ElectrotechnologyTechnical University MunichMunichGermany
  2. 2.Corporate Research and DevelopmentSiemens AGMunichGermany
  3. 3.Physical Electronics LaboratorySwiss Federal Institute of TechnologyZurichSwitzerland

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