Abstract
Device concept and model of a vertically integrated transistor-laser structure for a dual gainswitching involving carrier heating are reported. Capability of a proposed three-terminal device to generate high-intensity picosecond pulses is studied using numerical simulation.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
V. I. Tolstikhin, Techn. Phys. Lett., 18, 630 (1992).
S. V. Polyakov and V. I. Tolstikhin, Techn. Phys. Lett., 19, 110 (1993).
V. I. Tolstikhin and M. Willander, IEEE J. Quantum Electron., QE-31, 814 (1995).
V. Gorfinkel and S. Luryi, Appl. Phys. Lett., 62, 2923 (1993).
V. I. Tolstikhin and M. Willander, J. Appl. Phys., 77, 488 (1995).
V. I. Tolstikhin, A. N. Mamaev, and M. Willander, J. Appl. Phys., (to be published).
W. Fawcett, A. Boardman, and S. Swain, J. Phys. Chem. Solids, 31, 1963 (1970).
I. C. Kizilyalli and K. Hess, J. Appl. Phys., 65, 2005 (1989).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer-Verlag Wien
About this paper
Cite this paper
Tolstikhin, V.I., Willander, M. (1995). Modeling of a Hot Electron Injection Laser. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_49
Download citation
DOI: https://doi.org/10.1007/978-3-7091-6619-2_49
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
eBook Packages: Springer Book Archive