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A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and Its Application to the Design of Power MOSFETs

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Simulation of Semiconductor Devices and Processes

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Abstract

In this paper, we introduce a method for the fast simulation of 3D impurity profile simulation. We analytically integrated the approximated non-linear transport equation and derived an analytical equation of 3D non-linear diffusion by introducing a new physical parameter, called the Accumulated Diffusion Length (ADL). This method allows us to simulate a 3D-profile by using a coupled 1D simulator and analytical equations, where the ADL is obtained during 1D simulation. Our new methodology is implemented in the 3D process simulator, SPIRITIII/ADL. Our 3D-TCAD system composed of SPIRIT-III/ADL and our in-house device simulator was applied to the design of 3D-shaped power MOSFETs.

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Author information

Authors and Affiliations

  1. Semiconductor Development Center, Semiconductor & Integrated Circuit Div., Hitachi, Ltd., 1-280, Higashi-koigakubo Kokubunji, Tokyo, 185, Japan

    Shiroo Kamohara & Masahiro Sugaya

  2. Central Research Laboratory, Hitachi, Ltd., 1-280, Higashi-koigakubo Kokubunji, Tokyo, 185, Japan

    Hitoshi Matsuo

Authors
  1. Shiroo Kamohara
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  2. Masahiro Sugaya
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  3. Hitoshi Matsuo
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Kamohara, S., Sugaya, M., Matsuo, H. (1995). A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and Its Application to the Design of Power MOSFETs. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_46

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_46

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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