Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices
Quantitatively accurate simulation of He2+ irradiated power diode was achieved. The results have showed that accuracy of device parameter prediction depends essentially on accurate prediction of total defect concentrations and their projected ranges while other parameters, e.g. the defect profile shape, have been proved irrelevant. The VO(0/-) defect level was found to be dominant for devices febricated on low-doped FZ NTD n-Si.
KeywordsCapture Rate Defect Level Accurate Simulation Soft Factor Projected Range
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- P. Hazdra and J. Vobecký, “Modelling of Localized Lifetime Tailoring in Silicon Devices, ” Simulation of Semiconductor Devices and Processes, vol.5, Springer Verlag Wien, pp. 437–440, 1994.Google Scholar
- J. Vobecký, P. Hazdra, J. Voves, F. Spurný, J. Homola, “Accurate Simulation of Combined Electron and Ion Irradiated Silicon Devices for Local Lifetime Tailoring, ”Proc. of the 6th ISPSD’94, Davos, pp. 265–270, 1994.Google Scholar
- A. Hallén, “Lifetime Control in Silicon by Fast Ion Irradiation, ”PhD. Thesis, Acta Universitatis Upsaliensis, Uppsala, 1990.Google Scholar
- W. Wondrak, A. Boos, “Helium Implantation for Lifetime Control in Silicon Power Devices, ”Proc. of ESSDERC’87, Bologna, pp. 649–652, 1987.Google Scholar
- N. Keskitalo, “A Charge Carrier Lifetime Model for Proton Irradiated Silicon”, Licenciate of Technology, Dept. of Radiation Sciences, Uppsala University, 1994.Google Scholar