Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices

  • P. Hazdra
  • J. Vobecký
Conference paper


Quantitatively accurate simulation of He2+ irradiated power diode was achieved. The results have showed that accuracy of device parameter prediction depends essentially on accurate prediction of total defect concentrations and their projected ranges while other parameters, e.g. the defect profile shape, have been proved irrelevant. The VO(0/-) defect level was found to be dominant for devices febricated on low-doped FZ NTD n-Si.


Capture Rate Defect Level Accurate Simulation Soft Factor Projected Range 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • P. Hazdra
    • 1
  • J. Vobecký
    • 1
  1. 1.Department of MicroelectronicsCzech Technical University in PraguePraha 6Czech Republic

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