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An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids

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Simulation of Semiconductor Devices and Processes

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Abstract

A new finite element scheme for diffusion process simulation, which allows coarse grid spacings in the areas of exponentially varying concentrations and fluxes, is proposed. It employs a nonlinear test function obtained from local divergence free conditions. Two-dimensional test computations show clear superiority of the exponentially fitted finite element scheme over the standard approach, as well as its robustness regarding irregular grid geometry.

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References

  1. R. E. Lowther, “A discretization scheme that allows coarse grid-spacings in finite-difference process simulation, ”IEEE Trans. Computer-Aided Design, vol. 8, pp. 837–841, Aug. 1989.

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  2. I. Babuska and J. E. Osborn, “Generalized finite element methods: their performance and their relation to mixed methods, ”SIAM J. Numer. Anal., vol. 20, No. 3, pp. 510–536, June 1983.

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  3. H. Lee, R. Dutton and D. Antoniadis, “On redistribution of boron during thermal oxidation in silicon, ”J. Electrochem. Soc., vol. 126, pp. 2001–2007, 1979.

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  4. R. Ismail and G. Amaratunga, “Adaptive meshing schemes for simulating doping diffusion, ”IEEE Trans. Computer-Aided Design, vol. 9, pp. 276–289, March 1990.

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Author information

Authors and Affiliations

  1. Faculty of Electronic Engineering, University of Niš, Beogradska 14, 18000, Niš, Yugoslavia

    S. Mijalković

Authors
  1. S. Mijalković
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Mijalković, S. (1995). An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_43

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_43

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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