Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes

  • J. Zheng
  • J. P. McVittie
  • M. J. Kushner
  • Z. Krivokapic
Conference paper


In order to achieve predictive modeling results for plasma etching processes the effects of reactor, plasma, etch chemistry, and surface kinetics have to be taken into account concurrently. The new simulator was successfully tested on a case of polysilicon etching in a He/Cl2 chemistry.


Surface Kinetics Plasma Etch Electromagnetic Module Profile Simulator Sheath Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • J. Zheng
    • 1
  • J. P. McVittie
    • 1
  • M. J. Kushner
    • 2
  • Z. Krivokapic
    • 3
  1. 1.Stanford UniversityStanfordUSA
  2. 2.University of IllinoisUrbanaUSA
  3. 3.Advanced Micro DevicesSunnyvaleUSA

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