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Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors

  • D. Schipanski
  • Z. Gergintschew
  • J. Kositza

Abstract

The implementation of models for the gas adsorption on metal-oxide-semiconductors in a two-dimensional device simulator is the subject of this paper. Further we give an application example for the simulation of the sensitive reactions and the electronic device in their exchange. For that we use a conductivity type gas sensor with a polycrystalline ZnO active layer.

Keywords

Space Charge Region Current Density Distribution Sensitive Layer Work Function Change Strong Chemosorption 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    T. Wolkenstein, “Electronic Processes on Semiconductor Surfaces during Chemi-sorption, ”Consultants Bureau, New York, 1991.CrossRefGoogle Scholar
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    H. Geistlinger, “Electron theory of thin-film gas sensors, ”Sensors and Actuators B, vol. 17, no. 1, pp. 47–60, 1993.CrossRefGoogle Scholar
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    Z. Gergintschew, H. Foerster, J. Kositza and D. Schipanski, “Two-dimensional numerical simulation of semiconductor gas sensors, ”Sensors and Actuators B, vol 26, no. 1-3, pp. 170–173, 1995.CrossRefGoogle Scholar
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    H. Foerster and D. Nuernbergk, “PROSA-3.0, ”Technische Universitaet Ilmenau, Institut fuer Festkoerperelektronik, 1995.Google Scholar
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    N. Tagutchi, “UK Patent specification 1280809, ”1970.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. Schipanski
    • 1
  • Z. Gergintschew
    • 1
  • J. Kositza
    • 1
  1. 1.Institute for Solid State ElectronicsTechnical University of IlmenauIlmenauGermany

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