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Three Dimensional Simulation for Sputter Deposition Equipment and Processes

  • D. S. Bang
  • Z. Krivokapic
  • M. Hohmeyer
  • J. P. McVittie
  • K. C. Saraswat
Conference paper

Abstract

A three dimensional sputter deposition simulator based upon the SPEEDIE topography simulator is presented. The simulator combines equipment models with topography evolution models in order to predict topography for VLSI metallization. Equipment scale simulation is used to determine 3D particle flux for specified wafer points. The particle flux is then used by a 3D topography simulator to determine profile evolution. The generality of the topography simulator allows deposition simulations to be performed on structures with asymmetries in the x, y, and z-directions. Examples of metal deposition simulations for contact and dualdamascene structures are presented.

Keywords

Particle Flux Sticking Coefficient Dimensional Simulation Chamber Dimension Dual Damascene 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    A. Kersh, et. al., IEDM Technical Digest, (IEEE, Piscataway, 1992), p. 181.Google Scholar
  2. [2]
    S. Tazawa, et. al., IEDM Technical Digest, (IEEE, Piscataway, 1992), p. 173.Google Scholar
  3. [3]
    F.H. Baumann, et. al., IEDM Technical Digest, (IEEE, Piscataway, 1993), p. 8611993.Google Scholar
  4. [4]
    D.S. Bang, et. al., NUPAD V Technical Digest, (IEEE, Piscataway, 1994), p. 41.Google Scholar
  5. [5]
    SPEEDIE (Stanford Profile Emulator for Etching and Deposition in IC Engineering) is a VLSI etching and deposition simulator developed at Stanford University.Google Scholar
  6. [6]
    I.A. Blech and H.A. Vander Plas, J. Appl. Phys., 54, 3489, (1983).CrossRefGoogle Scholar
  7. [7]
    T.S. Cale, J. Vac. Sci. Technol. B 9, 2551 (1991).Google Scholar
  8. [8]
    M.M. Islamraja, et. al., Proc. 7th Inter. Conf. on Numerical Analysis of Semiconductor Devices, Copper Mt., 1991.Google Scholar
  9. [9]
    D.S. Bang, et. al., Proc. 10th Symp. Plasma Processing 94-20, (ECS, Pennington, 1994), p. 557.Google Scholar
  10. [10]
    ICEM is a commercial gridding program developed by ICEM CFD Engineering.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. S. Bang
    • 1
  • Z. Krivokapic
    • 2
  • M. Hohmeyer
    • 3
  • J. P. McVittie
    • 1
  • K. C. Saraswat
    • 1
  1. 1.Stanford UniversityStanfordUSA
  2. 2.Advanced Micro DevicesSunnyvaleUSA
  3. 3.ICEM CFD EngineeringBerkeleyUSA

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