Three Dimensional Simulation for Sputter Deposition Equipment and Processes

  • D. S. Bang
  • Z. Krivokapic
  • M. Hohmeyer
  • J. P. McVittie
  • K. C. Saraswat
Conference paper


A three dimensional sputter deposition simulator based upon the SPEEDIE topography simulator is presented. The simulator combines equipment models with topography evolution models in order to predict topography for VLSI metallization. Equipment scale simulation is used to determine 3D particle flux for specified wafer points. The particle flux is then used by a 3D topography simulator to determine profile evolution. The generality of the topography simulator allows deposition simulations to be performed on structures with asymmetries in the x, y, and z-directions. Examples of metal deposition simulations for contact and dualdamascene structures are presented.


Particle Flux Sticking Coefficient Dimensional Simulation Chamber Dimension Dual Damascene 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. S. Bang
    • 1
  • Z. Krivokapic
    • 2
  • M. Hohmeyer
    • 3
  • J. P. McVittie
    • 1
  • K. C. Saraswat
    • 1
  1. 1.Stanford UniversityStanfordUSA
  2. 2.Advanced Micro DevicesSunnyvaleUSA
  3. 3.ICEM CFD EngineeringBerkeleyUSA

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