Three Dimensional Simulation for Sputter Deposition Equipment and Processes
A three dimensional sputter deposition simulator based upon the SPEEDIE topography simulator is presented. The simulator combines equipment models with topography evolution models in order to predict topography for VLSI metallization. Equipment scale simulation is used to determine 3D particle flux for specified wafer points. The particle flux is then used by a 3D topography simulator to determine profile evolution. The generality of the topography simulator allows deposition simulations to be performed on structures with asymmetries in the x, y, and z-directions. Examples of metal deposition simulations for contact and dualdamascene structures are presented.
KeywordsParticle Flux Sticking Coefficient Dimensional Simulation Chamber Dimension Dual Damascene
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