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New Spreading Resistance Effect For Sub-0.50 µm MOSFETs: Model and Simulation

  • Marius Orlowski
  • William J. Taylor
Conference paper

Abstract

A new major spreading resistance (SR) contribution associated with the vertical shift of the peak LDD concentration into the bulk is reported. This contribution is at least a factor of 5 larger than the SR variations of the lateral S/D profile (with peak concentration at the interface) reported so far [1]. The effects are relevant to sub-0.5 µm devices manufactured with reduced thermal budgets. A resistor network model, corroborated by 2D simulations, explains the key features of the effect, including a reversal of SR trends for shallow junctions due to the impact of accumulation resistance (AR). For the first time, ostensibly conflicting data from experiments with various sheet resistances ϱ□, junction depths ϰj and S/D constructions can now be clearly understood.

Keywords

Sheet Resistance Lateral Profile Resistor Network Junction Depth Spreading Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    K. Ng and W. Lynch, TED-33, p.965 (1986)Google Scholar
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    A. Azuma, et al, Symp. VLSI Techn., p.129 (1994)Google Scholar
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    G. Baccarani and G. Sai-Halasz, EDL-4, p.27 (1983)Google Scholar
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    M. Seavey, EDL-5, p.479, (1984)Google Scholar
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    C. Mazuré, private communicationGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Marius Orlowski
    • 1
  • William J. Taylor
    • 1
  1. 1.Advanced Products and Development LaboratoryMotorola Inc.AustinUSA

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