New Spreading Resistance Effect For Sub-0.50 µm MOSFETs: Model and Simulation

  • Marius Orlowski
  • William J. Taylor
Conference paper


A new major spreading resistance (SR) contribution associated with the vertical shift of the peak LDD concentration into the bulk is reported. This contribution is at least a factor of 5 larger than the SR variations of the lateral S/D profile (with peak concentration at the interface) reported so far [1]. The effects are relevant to sub-0.5 µm devices manufactured with reduced thermal budgets. A resistor network model, corroborated by 2D simulations, explains the key features of the effect, including a reversal of SR trends for shallow junctions due to the impact of accumulation resistance (AR). For the first time, ostensibly conflicting data from experiments with various sheet resistances ϱ□, junction depths ϰj and S/D constructions can now be clearly understood.


Sheet Resistance Lateral Profile Resistor Network Junction Depth Spreading Resistance 
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  1. [1]
    K. Ng and W. Lynch, TED-33, p.965 (1986)Google Scholar
  2. [2]
    A. Azuma, et al, Symp. VLSI Techn., p.129 (1994)Google Scholar
  3. [3]
    G. Baccarani and G. Sai-Halasz, EDL-4, p.27 (1983)Google Scholar
  4. [4]
    M. Seavey, EDL-5, p.479, (1984)Google Scholar
  5. [5]
    C. Mazuré, private communicationGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Marius Orlowski
    • 1
  • William J. Taylor
    • 1
  1. 1.Advanced Products and Development LaboratoryMotorola Inc.AustinUSA

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