New Spreading Resistance Effect For Sub-0.50 µm MOSFETs: Model and Simulation
A new major spreading resistance (SR) contribution associated with the vertical shift of the peak LDD concentration into the bulk is reported. This contribution is at least a factor of 5 larger than the SR variations of the lateral S/D profile (with peak concentration at the interface) reported so far . The effects are relevant to sub-0.5 µm devices manufactured with reduced thermal budgets. A resistor network model, corroborated by 2D simulations, explains the key features of the effect, including a reversal of SR trends for shallow junctions due to the impact of accumulation resistance (AR). For the first time, ostensibly conflicting data from experiments with various sheet resistances ϱ□, junction depths ϰj and S/D constructions can now be clearly understood.
KeywordsSheet Resistance Lateral Profile Resistor Network Junction Depth Spreading Resistance
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