Abstract
Head resistances of diffused resistors are investigated by means of numerical device simulation. Outgoing from an understanding of the current flow pattern, an analytical model for the calculation of the head resistance from known geometric and technological parameters is developed. The results of the simulations and the modelling are verified by comparison with experimental data.
Keywords
- Contact Resistance
- Semiconductor Device
- Diffuse Resistor
- Specific Contact Resistance
- Spreading Resistance
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© 1995 Springer-Verlag Wien
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Witkowski, U., Schroeder, D. (1995). Numerical and analytical modelling of head resistances of diffused resistors. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_36
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_36
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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