Advertisement

The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI

  • M. Mukai
  • T. Tatsumi
  • N. Nakauchi
  • T. Kobayashi
  • K. Koyama
  • Y. Komatsu
  • R. Bauer
  • G. Rieger
  • S. Selberherr

Abstract

For the realization of today’s wiring miniaturization, it is required to accurately estimate the interconnect wiring capacitance and the current density, which has not been so far adequately accomplished. We have developed SENECA, the three-dimensional wiring capacitance and current density simulation system with graphical user interface for easy and flexible operation. The realization of this graphical input interface made it possible to reduce the man power from more than three days work to less than 30 minutes for a practical structure. The comparison between simulation and experiment proves quite good agreement. Three important applications are given to show how SENECA is utilized for practical cases.

Keywords

Simulation System Current Density Distribution Flexible Operation Barrier Metal Practical Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    R. Bauer et al., ”Capacitance Calculation of VLSI Multilevel Wiring Structures, ”Proc.VPAD Workshop, pp. 142–143, 1993.Google Scholar
  2. [2]
    R. Bauer et al., ”Calculating Coupling Capacitances of Three-Dimensional Interconnections, ”Proc. Solid State and Integrated Circuit Technology 92, pp.697–699, 1992.Google Scholar
  3. [3]
    K. Hoshino et al., ”Electromigration after Stress-induced Migration Test in Quarter-Micron Al Interconnects, ”Proc. IRPS, pp.252–255, 1994.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Mukai
    • 1
  • T. Tatsumi
    • 1
  • N. Nakauchi
    • 1
  • T. Kobayashi
    • 1
  • K. Koyama
    • 1
  • Y. Komatsu
    • 1
  • R. Bauer
    • 2
  • G. Rieger
    • 2
  • S. Selberherr
    • 2
  1. 1.ULSI R&D Laboratories, Semicon. Comp.Sony CorporationAtsugi-shi, Kanagawa-kenJapan
  2. 2.Institute for MicroelectronicsTU ViennaViennaAustria

Personalised recommendations