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Three-Dimensional Integrated Process Simulator: 3D-MIPS

  • M. Fujinaga
  • T. Kunikiyo
  • T. Uchida
  • K. Kamon
  • N. Kotani
  • T. Hirao
Conference paper

Abstract

We have developed a three-dimensional integrated process simulator of topography and impurity: 3D-MIPS. 3D-MIPS includes topography and impurity simulator, which can simulate deposition, etching, photolithography, BPSG flow, ion implantation, oxidation and impurity diffusion. The diffusion model, in particular, uses a novel equation which unifies diffusion and segregation. In this paper, these models and their simulation results are presented, and we demonstrate that it is possible to simulate 3D-complicated structures stably.

Keywords

Diffusion Model Impurity Diffusion NMOS Transistor Electric Field Effect Oxidation Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. Fujinaga
    • 1
  • T. Kunikiyo
    • 1
  • T. Uchida
    • 1
  • K. Kamon
    • 1
  • N. Kotani
    • 1
  • T. Hirao
    • 1
  1. 1.ULSI LaboratoryMitsubishi Electric CorporationItami, HyogoJapan

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