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Viscoelastic Modeling of Titanium Silicidation

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Simulation of Semiconductor Devices and Processes

Abstract

This paper describes titanium silicidation modeling using the process simulator FLOOPS. Erpimental work shows that viscoelastic models are required to fit the observed behavior. The capability to simulate a wide range of silicide examples are shown, but more experimental evidence is needed to calibrate the models.

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References

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© 1995 Springer-Verlag Wien

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Cea, S., Law, M. (1995). Viscoelastic Modeling of Titanium Silicidation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_31

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_31

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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