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Efficient and Rigorous 3D Model for Optical Lithography Simulation

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Simulation of Semiconductor Devices and Processes

Abstract

A new workstation-based rigorous model for 3D vector lithography simulation is introduced. The model extends a successful 2D lithography model, and has been applied to the simulation of 3D photomasks. The theory behind the new model is presented, and examples are given of the model’s results and computational efficiency. The procedures for extending the model to the simulation of 3D optical alignment, metrology and photoresist bleaching problems are also given.

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References

  1. C. M. Yuan, A. J. Strojwas. Proc. of SPIE Microlithography Vol. 1264, 1990.

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  2. K. D. Lucas, C. M. Yuan, A. J. Strojwas. SISDEP IV 1991.

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  3. K. D. Lucas, A. J. Strojwas. Proc. of SPIE Microlithography Vol. 1809, 1992.

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  4. H. Tanabe. Proc. of SPIE Microlithography Vol. 1674, 1992.

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  6. K. D. Lucas, H. Tanabe, A. J. Strojwas. Proc. of SPIE Microlithography Vol. 2440, 1995.

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© 1995 Springer-Verlag Wien

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Lucas, K.D., Tanabe, H., Yuan, CM., Strojwas, A.J. (1995). Efficient and Rigorous 3D Model for Optical Lithography Simulation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_3

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_3

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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