2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion
MOSFET simulation is performed by direct self-consistent solution of the Boltzmann, Poisson and Hole Continuity equations. To formulate the Boltzmann equation, a spherical harmonic approach has been developed which allows for expansion to arbitrarily high order. The self-consistent 2-dimensional MOSFET simulations incorporated four spherical harmonics. Simulation results provide the distribution function for the entire device, as well as substrate current, and average quantities including electron temperature, average velocity, and carrier concentration.
KeywordsBoltzmann Transport Equation Substrate Current Entire Device Momentum Distribution Function Spherical Harmonic Basis
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- K. Hennacy, Spherical Harmonic and Effective Field Formulations of Boltzmann’s Transport Equation: Case Studies in Silicon. PhD thesis, University of Maryland, 1994.Google Scholar