Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heterojunction Bipolar Transistors
A simple but effective numerical method for the determination of Ge profiles leading to minimum neutral base transit time τ B is presented. The profiles under consideration have been taken from a large general class of functions. The resulting profiles show that significant reductions in σ B can be achieved when they are compared to other investigated profile types. Moreover the position dependence of these optimum profiles has a simple structure. Thus there are no additional technological difficulties for their realization.
KeywordsBipolar Transistor Doping Profile Heterojunction Bipolar Transistor Optimum Profile Intrinsic Carrier Concentration
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- S. Marksteiner, “Bauelement-Simulation von Si1-yGey-Hetero-Bipolar-Transis-toren”, Master’s thesis. Institut für Theoretische Physik, Universität Innsbruck. Innsbruck, 1992.Google Scholar