Abstract
We present a numerical HF noise analysis of Si/Si1-xGex/Si heterojunction bipolar transistors based on the time-dependent solution of the drift-diffusion equations. For the MHz range an analytical expression for the noise figures is derived.
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References
H. Schumacher and U. Erben, Heterojunction Bipolar Transistors for Noise-Critical Applications, Proc. of 18. SOTAPOCS, vol. 93, no. 27, pp. 345–352, 1993.
F. Herzel and B. Heinemann, High-Frequency Noise of Bipolar Devices in Consideration of Carrier Heating and Low Temperature Effects, accepted for publication in Solid-St. Electron.
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© 1995 Springer-Verlag Wien
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Herzel, F., Heinemann, B. (1995). A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_23
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_23
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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