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A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors

  • Frank Herzel
  • Bernd Heinemann

Abstract

We present a numerical HF noise analysis of Si/Si1-xGex/Si heterojunction bipolar transistors based on the time-dependent solution of the drift-diffusion equations. For the MHz range an analytical expression for the noise figures is derived.

Keywords

Collector Current Medium Frequency Noise Figure Bipolar Transistor Current Gain 
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References

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    H. Schumacher and U. Erben, Heterojunction Bipolar Transistors for Noise-Critical Applications, Proc. of 18. SOTAPOCS, vol. 93, no. 27, pp. 345–352, 1993.Google Scholar
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    F. Herzel and B. Heinemann, High-Frequency Noise of Bipolar Devices in Consideration of Carrier Heating and Low Temperature Effects, accepted for publication in Solid-St. Electron. Google Scholar
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    H. Gajewski, K. Zacharias, H. Langmach, G. Telschow, and M. Uhle, TOSCA user’s guide, Weierstraß-Institute for Mathematics, Berlin, 1986.Google Scholar
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    R. J. Hawkins, Limitations of Nielsen’s and Related Noise Equations Applied to Microwave Bipolar Transistors, and a New Expression for the Frequency and Current Dependent Noise Figure, Solid-St. Electron., vol. 20, pp. 191–196, 1977.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Frank Herzel
    • 1
  • Bernd Heinemann
    • 1
  1. 1.Institut für HalbleiterphysikFrankfurt (Oder)Germany

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