A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors

  • Frank Herzel
  • Bernd Heinemann


We present a numerical HF noise analysis of Si/Si1-xGex/Si heterojunction bipolar transistors based on the time-dependent solution of the drift-diffusion equations. For the MHz range an analytical expression for the noise figures is derived.


Collector Current Medium Frequency Noise Figure Bipolar Transistor Current Gain 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Frank Herzel
    • 1
  • Bernd Heinemann
    • 1
  1. 1.Institut für HalbleiterphysikFrankfurt (Oder)Germany

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