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Piezoresistance and the Drift-Diffusion Model in Strained Silicon

  • A. Nathan
  • T. Manku

Abstract

We have computed the strain-dependent tensorial mobility values for p-type Si based on a rigorous analysis of the valence band structure taking into account spin-orbit coupling effects. The mobilities, computed for not too large strain levels, are in agreement with the well known measured piezoresistance coefficients. Thus we now have a very convenient form of description for the drift-diffusion current density which can be incorporated in any device simulator.

Keywords

Hall Mobility Heavy Hole Light Hole Valence Band Structure Strain Silicon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • A. Nathan
    • 1
    • 2
  • T. Manku
    • 3
  1. 1.Electrical and Computer EngineeringUniversity of WaterlooWaterlooCanada
  2. 2.Physical Electronics LaboratoryETH HoenggerbergZurichSwitzerland
  3. 3.Electrical EngineeringTechnical University of Nova ScotiaHalifaxCanada

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