Piezoresistance and the Drift-Diffusion Model in Strained Silicon

  • A. Nathan
  • T. Manku


We have computed the strain-dependent tensorial mobility values for p-type Si based on a rigorous analysis of the valence band structure taking into account spin-orbit coupling effects. The mobilities, computed for not too large strain levels, are in agreement with the well known measured piezoresistance coefficients. Thus we now have a very convenient form of description for the drift-diffusion current density which can be incorporated in any device simulator.


Hall Mobility Heavy Hole Light Hole Valence Band Structure Strain Silicon 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • A. Nathan
    • 1
    • 2
  • T. Manku
    • 3
  1. 1.Electrical and Computer EngineeringUniversity of WaterlooWaterlooCanada
  2. 2.Physical Electronics LaboratoryETH HoenggerbergZurichSwitzerland
  3. 3.Electrical EngineeringTechnical University of Nova ScotiaHalifaxCanada

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