Piezoresistance and the Drift-Diffusion Model in Strained Silicon
We have computed the strain-dependent tensorial mobility values for p-type Si based on a rigorous analysis of the valence band structure taking into account spin-orbit coupling effects. The mobilities, computed for not too large strain levels, are in agreement with the well known measured piezoresistance coefficients. Thus we now have a very convenient form of description for the drift-diffusion current density which can be incorporated in any device simulator.
KeywordsHall Mobility Heavy Hole Light Hole Valence Band Structure Strain Silicon
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