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Piezoresistance and the Drift-Diffusion Model in Strained Silicon

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Book cover Simulation of Semiconductor Devices and Processes

Abstract

We have computed the strain-dependent tensorial mobility values for p-type Si based on a rigorous analysis of the valence band structure taking into account spin-orbit coupling effects. The mobilities, computed for not too large strain levels, are in agreement with the well known measured piezoresistance coefficients. Thus we now have a very convenient form of description for the drift-diffusion current density which can be incorporated in any device simulator.

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References

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Author information

Authors and Affiliations

  1. Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada

    A. Nathan

  2. Physical Electronics Laboratory, ETH Hoenggerberg, CH-8093, Zurich, Switzerland

    A. Nathan

  3. Electrical Engineering, Technical University of Nova Scotia, P.O. Box 1000, Halifax, Nova Scotia, B3J 2X4, Canada

    T. Manku

Authors
  1. A. Nathan
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  2. T. Manku
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Nathan, A., Manku, T. (1995). Piezoresistance and the Drift-Diffusion Model in Strained Silicon. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_22

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_22

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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