An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs
An improved cellular automaton(CA) method is proposed in which an interpolated flux concept is introduced to suppress a well-known artifitial diffusion problem. The new method allows larger mesh sizes both in real and momentum space without losing numerical accuracy. Consequently, it becomes a practical modeling tool of non-linear carrier transport in semiconductor devices. In its application to Si MOSFETs, obtained results are extremely stable beyond the advanced weighted Monte Carlo method. Furthermore, making the best use of the stability, gate currents are studied in detail. 2 peaks of gate currents on gate bias, so-called drain avalanche hot carrier(DAHC) and channel hot electron(CHE), are well explained by thermionic emission and Fowler Nordheim(FN) tunneling of hot carriers respectively.
KeywordsMonte Carlo Cellular Automaton Thermionic Emission Gate Bias Boltzmann Transport Equation
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