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Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices

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Simulation of Semiconductor Devices and Processes

Abstract

The convective hydrodynamic model of semiconductor devices is analyzed employing parallel and stabilized finite element methods. The stabilized finite element method for the two-carrier hydrodynamic equations and the parallel computational model are briefly described. Numerical results are shown for a bipolar transistor. A comparison of drift-diffusion, energy-transport and the hydrodynamic models is presented for a 0.1µm channel n +-n-n + silicon diode.

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References

  1. N. R. Aluru, Parallel and Stabilized Finite Element Methods for the Hydrodynamic Transport Model of Semiconductor Devices, Ph.D Thesis, Stanford University, June 1995.

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© 1995 Springer-Verlag Wien

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Aluru, N.R., Law, K.H., Dutton, R.W. (1995). Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_20

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_20

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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