Abstract
The convective hydrodynamic model of semiconductor devices is analyzed employing parallel and stabilized finite element methods. The stabilized finite element method for the two-carrier hydrodynamic equations and the parallel computational model are briefly described. Numerical results are shown for a bipolar transistor. A comparison of drift-diffusion, energy-transport and the hydrodynamic models is presented for a 0.1µm channel n +-n-n + silicon diode.
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N. R. Aluru, Parallel and Stabilized Finite Element Methods for the Hydrodynamic Transport Model of Semiconductor Devices, Ph.D Thesis, Stanford University, June 1995.
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© 1995 Springer-Verlag Wien
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Aluru, N.R., Law, K.H., Dutton, R.W. (1995). Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_20
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_20
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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