An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge
In recent years, the increasing interest for Thin-Film Transistor (TFTs) has made the modeling of semiconductor devices with localized states increasingly important. In transient conditions, the dynamic change of trapped charge must be properly accounted for and two continuity equations ought to be considered in addition to the standard semiconductor equations. We propose here a novel methodology to solve this problem without increasing the number of resulting equations, which takes advantage of the locality of the trapped-charge conservation equations. In this way, the solution is achieved without resorting to approximation in the description of the trap-states dynamics.
KeywordsSemiconductor Device Transient Condition Amorphous Silicon Polycrystalline Silicon Trap Charge
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