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Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States

  • K. Horio
  • K. Satoh
  • T. Yamada

Abstract

Effects of surface states on I-V curves and turn-on characteristics in GaAs MESFETs are studied by 2-D simulation. These characteristics are essentially determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of slow transients due to surface states is discussed.

Keywords

Surface State Gate Voltage Electron Trap Drain Current Hole Trap 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • K. Horio
    • 1
  • K. Satoh
    • 1
  • T. Yamada
    • 1
  1. 1.Faculty of Systems EngineeringShibaura Institute of TechnologyOmiyaJapan

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