Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States
Effects of surface states on I-V curves and turn-on characteristics in GaAs MESFETs are studied by 2-D simulation. These characteristics are essentially determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of slow transients due to surface states is discussed.
KeywordsSurface State Gate Voltage Electron Trap Drain Current Hole Trap
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