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Cellular Automata Simulation of GaAs-IMPATT-Diodes

  • D. Liebig

Abstract

A new 3-dimensional cellular automata method is presented which improves the numerical efficiency of standard Monte-Carlo codes by keeping the physical accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.

Keywords

Cellular Automaton Drift Velocity Cellular Automaton Longitudinal Diffusivity Injection Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    K. Kometer, G. Zandler and P. Vogl, Phys. Rev. B, 46, 1382 (1992).CrossRefGoogle Scholar
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    E. O. Kane, J. Phys. Chem. Solids 12, 181 (1959); Phys. Rev. 159, 624 (1967).CrossRefGoogle Scholar
  3. [3]
    M. Tschernitz et al, ”GaAs Read-type IMPATT-diode for D-Band”, Electronics Letters, 30, 1070 (1994).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. Liebig
    • 1
  1. 1.Arbeitsbereich HochfrequenztechnikTechnische Universität Hamburg-HarburgHamburgGermany

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