Cellular Automata Simulation of GaAs-IMPATT-Diodes

  • D. Liebig


A new 3-dimensional cellular automata method is presented which improves the numerical efficiency of standard Monte-Carlo codes by keeping the physical accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.


Cellular Automaton Drift Velocity Cellular Automaton Longitudinal Diffusivity Injection Region 
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    M. Tschernitz et al, ”GaAs Read-type IMPATT-diode for D-Band”, Electronics Letters, 30, 1070 (1994).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. Liebig
    • 1
  1. 1.Arbeitsbereich HochfrequenztechnikTechnische Universität Hamburg-HarburgHamburgGermany

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