Cellular Automata Simulation of GaAs-IMPATT-Diodes
A new 3-dimensional cellular automata method is presented which improves the numerical efficiency of standard Monte-Carlo codes by keeping the physical accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.
KeywordsCellular Automaton Drift Velocity Cellular Automaton Longitudinal Diffusivity Injection Region
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