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ALAMODE: A Layered Model Development Environment

  • D. W. Yergeau
  • E. C. Kan
  • M. J. Gander
  • R. W. Dutton

Abstract

To accurately simulate modern semiconductor process steps, TCAD tools must include a variety of physical models and numerical methods. Increasingly complex physical formulations are required to account for effects that were not important in previous generation of technology. As a specific example, the impurity diffusion mechanisms owing to point defects and damage kinetics are not well understood, and thus flexibility in definition of models is highly desirable. An object-oriented approach has been applied to implementing a 1-2-3D finiteelement dial-an-operator PDE solver. The control interface is based on Tcl and allows layered access to model definitions and solution techniques.

Keywords

Information Model Impurity Diffusion Model Library Layered Access Bimolecular Recombination 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    B.J. Mulvaney, et. al., PEPPER 1.2 User Manual, MCC Tech. Rep. CAD-239-90, 1989.Google Scholar
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    J.K. Ousterhout, Tcl and the Tk Toolkit, Addison-Wesley, 1994.Google Scholar
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    S. Bebee, et. al., “Next-generation Stanford TCAD — PISCES 2ET and SUPREM 007, ” IEDM Technical Digest, 1994, p. 213.Google Scholar
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    D.W. Yergeau, R.W. Dutton and R.J.G. Goossens, “A General OO-PDE Solver for TCAD Applications, ”OONSKI 94, Mar. 1994, Oregon.Google Scholar
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    W.B. Richardson and B.J. Mulvaney, “Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?, ”Appl. Phys. Lett., vol. 53, no. 20, pp. 1917–1919, 1988.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. W. Yergeau
    • 1
  • E. C. Kan
    • 1
  • M. J. Gander
    • 1
  • R. W. Dutton
    • 1
  1. 1.Integrated Circuits LaboratoryStanford UniversityStanfordUSA

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