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Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation

  • W. Bohmayr
  • A. Burenkov
  • J. Lorenz
  • H. Ryssel
  • S. Selberherr

Abstract

Three trajectory split methods [1] for the acceleration of two and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets are presented. They ensure a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approaches have been confirmed by a thorough statistical analysis.

Keywords

Statistical Accuracy Split Method Split Point Collision Cascade Implantation Damage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    W. Bohmayr and S. Selberherr, “Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners”, VLSI-TSA, Taipei, Taiwan. 1995.Google Scholar
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    K.M. Klein, C. Park, and A.F. Tasch, “Monte Carlo Simulation of Boron Implantation into Single-Crystal Silicon”. IEEE Trans. Electron Devices. ED-39, pp. 1614–1621, 1992.CrossRefGoogle Scholar
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    M. Jaraiz, J. Arias, E. Rubio, L.A. Marques, L. Pelaz, L. Bailon, and J. Bar-bolla, “Dechanneling by Thermal Vibrations in Silicon Ion Implantation”, X International Conference on Ion Implantation Technology. Abstract P-2.19, Catania, Italy, 1994.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • W. Bohmayr
    • 1
  • A. Burenkov
    • 2
  • J. Lorenz
    • 2
  • H. Ryssel
    • 2
    • 3
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria
  2. 2.Fraunhofer-Institut für Integrierte SchaltungenErlangenGermany
  3. 3.Lehrstuhl für elektronische BauelementeUniversität Erlangen-NürnbergErlangenGermany

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